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| AF1333P P-Channel Enhancement Mode Power MOSFET Features - Simple Gate Drive - Fast Switching Speed - Small Package Outline (SOT323) Description The advanced power MOSFET provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. Product Summary BVDSS = -20V RDS (on) = 800m. ID = -550mA Pin Assignments 3 (Top View) 1. G 2. S 3. D Pin Descriptions Pin No. 1 2 3 Pin Name G S D Description Gate Source Drain 1 2 Ordering information A Feature F :MOSFET X 1333P X X X Package U: SOT323 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel PN Block Diagram D S G This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Oct 15, 2004 1/5 AF1333P P-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2, 3) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range TA=25C TA=70C TA=25C Rating -20 12 -550 -440 -2.5 0.35 0.003 -55 to +150 -55 to +150 Unit V V mA A W W/oC o C o C Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-Ambient (Note 1) Max. Value 360 Unit C/W Electrical Characteristics at TA=25oC (unless otherwise specified) Symbol BVDSS BVDSS / TJ RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Test Conditions Drain-Source Breakdown Voltage VGS=0V, ID=-250uA Breakdown Voltage Temperature Reference to 25oC, ID=-1mA Coefficient VGS=-10V, ID=-550mA Static Drain-Source VGS=-4.5V, ID=-550mA On-Resistance VGS=-2.5V, ID=-300mA Gate Threshold Voltage VDS=VGS, ID=-250uA Forward Transconductance VDS=-5V, ID=-500mA Drain-Source Leakage Current VDS=-20V, VGS=0V (TJ=25oC) Drain-Source Leakage Current VDS=-16V, VGS=0V (TJ=70oC) Gate-Source Leakage VGS=12V Total Gate Charge (Note 3) ID=-500mA, VDS=-16V, Gate-Source Charge VGS=-4.5V Gate-Drain ("Miller") Charge Turn-On Delay Time (Note 3) VDS=-10V, ID=-500mA, Rise Time RG=3.3, VGS=-5V Turn-Off Delay Time RD=20 Fall-Time Input Capacitance VGS=0V, VDS=-10V, Output Capacitance f=1.0MHz Reverse Transfer Capacitance Min. -20 -0.5 Typ. 0.01 1 1.7 0.3 0.4 5 8 10 2 66 25 20 Max. 600 800 1000 -1.2 -1 uA -10 100 2.7 105.6 nA nC Unit V V/oC m V S ns pF Source-Drain Diode Note 1: Surface mounted on FR4 board, t 10 sec. Note 2: Pulse width limited by Max. junction temperature. Note 3: Pulse width 300us, duty cycle 2%. Symbol VDS Parameter Forward On Voltage (Note 3) Test Conditions IS=-300mA, VGS=0V Min. - Typ. - Max. -1.2 Unit V Anachip Corp. www.anachip.com.tw 2/5 Rev. 1.0 Oct 15, 2004 AF1333P P-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature Anachip Corp. www.anachip.com.tw 3/5 Rev. 1.0 Oct 15, 2004 AF1333P P-Channel Enhancement Mode Power MOSFET Typical Performance Characteristics (Continued) Fig 7. Gate Charge Characteristics Fig 8. Typical capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Anachip Corp. www.anachip.com.tw 4/5 Rev. 1.0 Oct 15, 2004 AF1333P P-Channel Enhancement Mode Power MOSFET Marking Information (Top View) SOT323 Part Number: AF1333P A~Z: Week: 27~52 or Lot No: 1~9 A~Z: Week: 01~26 or Lot No: 1~9 X X: Year: 4 years in one cycle X X: 2004, 2008, 2012... X X: 2005, 2009, 2013... X X: 2006, 2010, 2014... X X: 2007, 2011, 2015... 3 XX Package Information Package Type: SOT323 D D1 E1 E e *Dimension does not include mold protrusions. Symbol A A1 D D1 E E1 e Dimensions In Millimeters Min. 0.90 0.03 1.90 0.20 2.00 1.15 Nom. 1.00 0.07 2.00 0.30 2.10 1.25 1.30 Bsc. Max. 1.10 0.10 2.10 0.40 2.20 1.35 Dimensions In Inches Min. 0.035 0.001 0.075 0.008 0.079 0.045 Nom. 0.039 0.003 0.079 0.012 0.083 0.049 0.051 Bsc. Max. 0.043 0.004 0.083 0.016 0.087 0.053 Anachip Corp. www.anachip.com.tw 5/5 A1 Rev. 1.0 A Oct 15, 2004 |
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